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M29DW323DB70N6 from ST,ST Microelectronics

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M29DW323DB70N6

Manufacturer: ST

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

Partnumber Manufacturer Quantity Availability
M29DW323DB70N6 ST 4001 In Stock

Description and Introduction

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory The **M29DW323DB70N6** is a **32 Mbit (4M x 8-bit or 2M x 16-bit)** flash memory device manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Memory Density:** 32 Mbit (4 MB)  
- **Organization:**  
  - **x8:** 4,194,304 words × 8 bits  
  - **x16:** 2,097,152 words × 16 bits  
- **Supply Voltage:**  
  - **Core:** 2.7V to 3.6V  
  - **I/O:** 1.65V to 3.6V  
- **Access Time:** **70 ns**  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** **TSOP-48** (12 x 20 mm)  

### **Features:**  
- **Dual-Bank Architecture:** Allows simultaneous read and write operations.  
- **Sector Erase Capability:** Uniform 64 KB sectors.  
- **Block Protection:** Hardware and software protection mechanisms.  
- **Low Power Consumption:**  
  - **Active Read Current:** 15 mA (typical)  
  - **Standby Current:** 5 µA (typical)  
- **Compatibility:** Supports **CFI (Common Flash Interface)** for system integration.  
- **High Performance:** Fast program and erase times.  
- **Reliability:** 100,000 erase/program cycles per sector, 20-year data retention.  

### **Applications:**  
- Embedded systems  
- Automotive electronics  
- Industrial controls  
- Networking equipment  

This flash memory is designed for high-performance, low-power applications requiring reliable non-volatile storage.

Application Scenarios & Design Considerations

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
Partnumber Manufacturer Quantity Availability
M29DW323DB70N6 ST 3 In Stock

Description and Introduction

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory The **M29DW323DB70N6** is a flash memory device manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Memory Type:** NOR Flash  
- **Density:** 32 Mbit (4 MB)  
- **Organization:**  
  - Uniform 64 KB sectors  
  - 16 KB parameter sectors  
- **Supply Voltage:**  
  - **VCC (Core):** 2.7V to 3.6V  
  - **VCCQ (I/O):** 1.65V to 3.6V  
- **Access Time:** 70 ns  
- **Interface:**  
  - **Asynchronous** (x8/x16)  
  - **Page Mode** (for faster read operations)  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:**  
  - **TSOP-48** (Thin Small Outline Package)  

### **Descriptions:**
- The **M29DW323DB70N6** is a **dual-bank flash memory**, allowing simultaneous read and write operations.  
- It supports **asynchronous and burst read modes** for efficient data access.  
- Features **hardware and software data protection** mechanisms, including block locking.  
- Designed for **embedded systems**, automotive, and industrial applications.  

### **Features:**
- **Dual-Bank Architecture:** Enables read-while-write (RWW) and read-while-erase (RWE) operations.  
- **Low Power Consumption:**  
  - Active current: 15 mA (typical)  
  - Standby current: 10 µA (typical)  
- **High Reliability:**  
  - Endurance: 100,000 write/erase cycles per sector  
  - Data retention: 20 years  
- **Advanced Security:**  
  - **OTP (One-Time Programmable)** sector for secure data storage.  
  - **Password Protection** for additional security.  
- **Compatibility:**  
  - JEDEC-standard commands for easy integration.  
  - Supports **CFI (Common Flash Interface)** for device identification.  

This flash memory is commonly used in **automotive electronics, networking equipment, and industrial control systems**.  

Would you like any additional details?

Application Scenarios & Design Considerations

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

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