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M29DW323DB-70N6E from ST,ST Microelectronics

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M29DW323DB-70N6E

Manufacturer: ST

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

Partnumber Manufacturer Quantity Availability
M29DW323DB-70N6E,M29DW323DB70N6E ST 16 In Stock

Description and Introduction

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory The **M29DW323DB-70N6E** is a flash memory device manufactured by **STMicroelectronics (ST)**. Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)  
- **Memory Type:** NOR Flash  
- **Density:** 32 Mbit (4 MB)  
- **Organization:**  
  - x16 data bus  
  - 2 Mbit (256 KB) sectors  
- **Supply Voltage:** 2.7V - 3.6V  
- **Speed:**  
  - Access time: **70 ns**  
  - Page read time: **25 ns**  
- **Operating Temperature Range:**  
  - Industrial: **-40°C to +85°C**  
- **Package:**  
  - **TSOP-48** (Thin Small Outline Package)  
- **Interface:**  
  - Asynchronous read/write  
  - Supports CFI (Common Flash Interface)  

### **Descriptions and Features:**  
- **Dual-Bank Architecture:**  
  - Allows simultaneous read and program/erase operations in different banks.  
- **Sector Protection:**  
  - Hardware and software protection for individual sectors.  
- **Low Power Consumption:**  
  - Standby current: **1 µA (typical)**  
  - Active read current: **10 mA (typical)**  
- **High Reliability:**  
  - Endurance: **100,000 program/erase cycles per sector**  
  - Data retention: **20 years**  
- **Command Set Compatibility:**  
  - JEDEC-standard commands for easy integration.  
- **Embedded Algorithms:**  
  - Automatic program and erase operations.  

This information is based on the manufacturer's datasheet for the **M29DW323DB-70N6E** NOR Flash memory device.

Application Scenarios & Design Considerations

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

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