1 Mb 128K x 8/ Chip Erase FLASH MEMORY The **M28F101-90N1** is a flash memory device manufactured by **STMicroelectronics (ST)**. Below are the specifications, descriptions, and features based on available factual data:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)
- **Part Number:** M28F101-90N1
- **Memory Type:** Flash (EEPROM)
- **Density:** 1 Mbit (128K x 8)
- **Access Time:** 90 ns
- **Supply Voltage:** 5V ±10%
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) (varies by variant)
- **Package:** 32-lead PLCC (Plastic Leaded Chip Carrier)
- **Interface:** Parallel (8-bit data bus)
- **Endurance:** 100,000 write/erase cycles (minimum)
- **Data Retention:** 10 years (minimum)
### **Descriptions:**
- The **M28F101-90N1** is a **1 Mbit (128K x 8)** flash memory chip designed for embedded systems, industrial applications, and computing devices.
- It supports **byte-wide** read and write operations with a **90 ns access time**, making it suitable for high-performance applications.
- The device features **sector erase capability**, allowing selective erasure of memory blocks.
- It includes **automatic programming and erase algorithms** with internal timers for simplified operation.
### **Features:**
- **High-Speed Access:** 90 ns read access time.
- **Low Power Consumption:** Standby and active power-saving modes.
- **Sector Erase Architecture:** Supports 16 KB sectors for flexible memory management.
- **Hardware & Software Data Protection:** Prevents accidental writes.
- **Compatibility:** TTL-compatible inputs and outputs.
- **Reliability:** High endurance and long-term data retention.
This information is based on STMicroelectronics' documentation for the **M28F101-90N1** flash memory device.
