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M27W512-100N6 from ST,ST Microelectronics

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M27W512-100N6

Manufacturer: ST

512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM

Partnumber Manufacturer Quantity Availability
M27W512-100N6,M27W512100N6 ST 91 In Stock

Description and Introduction

512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM The **M27W512-100N6** is a 512-Kbit (64K x 8) UV EPROM (Erasable Programmable Read-Only Memory) manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 64K x 8 (512 Kbit)  
- **Supply Voltage (VCC):** 5V ± 10%  
- **Access Time:** 100 ns  
- **Operating Temperature Range:**  
  - Commercial (0°C to +70°C)  
  - Industrial (-40°C to +85°C)  
- **Package:** 28-lead PDIP (Plastic Dual In-line Package)  
- **Technology:** UV-erasable EPROM  
- **Programming Voltage (VPP):** 12.5V  

### **Descriptions:**
- The **M27W512-100N6** is a non-volatile memory chip that can be erased by exposure to ultraviolet light and reprogrammed electrically.  
- It is designed for applications requiring reliable, high-density read-only memory storage.  
- The device features a **single 5V power supply** for read operations and requires a **12.5V programming voltage** for writing data.  

### **Features:**
- **High-Speed Access Time:** 100 ns  
- **Low Power Consumption:**  
  - Active current: 30 mA (max)  
  - Standby current: 100 µA (max)  
- **CMOS Technology for Low Power**  
- **JEDEC Standard Pinout** for compatibility with other EPROMs  
- **Reliable Data Retention:** 10 years minimum  
- **UV Erasure Window** for easy reprogramming  

This device is commonly used in embedded systems, industrial controls, and legacy computing applications.  

(Source: STMicroelectronics datasheet for M27W512-100N6)

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