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M27W401-80N6 from ST,ST Microelectronics

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M27W401-80N6

Manufacturer: ST

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM

Partnumber Manufacturer Quantity Availability
M27W401-80N6,M27W40180N6 ST 40 In Stock

Description and Introduction

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM The part **M27W401-80N6** is a **4 Mbit (512Kb x8) Low Voltage One-Time Programmable (OTP) EPROM** manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Memory Size:** 4 Mbit (512Kb x8)  
- **Supply Voltage:** 3V to 3.6V  
- **Access Time:** 80 ns  
- **Package:** PLCC32 (Plastic Leaded Chip Carrier, 32 pins)  
- **Technology:** CMOS floating-gate  
- **Operating Temperature Range:** -40°C to +85°C  
- **OTP (One-Time Programmable):** Data can be programmed once and cannot be erased  

### **Features:**  
- **Low Power Consumption:**  
  - Active current: 15 mA (typical)  
  - Standby current: 100 µA (typical)  
- **Fast Read Access Time:** 80 ns  
- **Compatible with JEDEC Standards**  
- **High Reliability:** Endurance and data retention characteristics  
- **Programming Voltage:** 12V (required for programming)  

This EPROM is designed for embedded systems and applications requiring non-volatile memory storage.  

Would you like any additional details?

Partnumber Manufacturer Quantity Availability
M27W401-80N6,M27W40180N6 3600 In Stock

Description and Introduction

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM The **M27W401-80N6** is a flash memory device manufactured by **Numonyx** (now part of **Micron Technology**). Below are its key specifications, descriptions, and features:  

### **Manufacturer:**  
- **Numonyx** (acquired by Micron Technology)  

### **Specifications:**  
- **Type:** Parallel NOR Flash Memory  
- **Density:** 4 Mbit (512K x 8-bit or 256K x 16-bit)  
- **Supply Voltage:** 2.7V - 3.6V  
- **Speed:** 80 ns access time  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 48-ball TFBGA (6x8 mm)  

### **Features:**  
- **High-Performance Read Operations**  
- **Low Power Consumption** (typical active current: 15 mA)  
- **Sector Architecture:** Uniform 64 KB sectors  
- **Hardware and Software Data Protection**  
- **Compatible with JEDEC Standards**  
- **Extended Endurance:** 100,000 program/erase cycles  
- **Data Retention:** 20 years  

### **Applications:**  
- Embedded systems  
- Automotive electronics  
- Industrial controls  
- Networking equipment  

This device is designed for applications requiring reliable, high-speed non-volatile memory with low power consumption.

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