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M27W401-80K6 from ST,ST Microelectronics

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M27W401-80K6

Manufacturer: ST

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM

Partnumber Manufacturer Quantity Availability
M27W401-80K6,M27W40180K6 ST 63 In Stock

Description and Introduction

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM Here are the factual details about the **M27W401-80K6** from the manufacturer **STMicroelectronics (ST)**:

### **Specifications:**
- **Part Number:** M27W401-80K6  
- **Manufacturer:** STMicroelectronics (ST)  
- **Type:** 4 Mbit (512K x 8) UV EPROM  
- **Speed:** 80 ns access time  
- **Supply Voltage:** 5V ±10%  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 32-lead PLCC (Plastic Leaded Chip Carrier)  
- **Technology:** UV-erasable, electrically programmable ROM  
- **Programming Voltage (VPP):** 12.5V  
- **Standby Current:** 100 µA (max)  
- **Active Current:** 30 mA (max)  

### **Descriptions and Features:**
- **High-Speed Performance:** 80 ns access time for fast read operations.  
- **UV-Erasable:** Can be erased via UV light exposure for reprogramming.  
- **Single 5V Power Supply:** Simplifies system design.  
- **Low Power Consumption:** Features standby mode for reduced power usage.  
- **Compatibility:** Industry-standard pinout for easy integration.  
- **Reliability:** High endurance and data retention characteristics.  

This information is based on ST's official documentation for the **M27W401-80K6** UV EPROM.

Partnumber Manufacturer Quantity Availability
M27W401-80K6,M27W40180K6 72 In Stock

Description and Introduction

4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM The part **M27W401-80K6** is a **4 Mbit (512Kb x8) Low Voltage 3V Supply Flash Memory** manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Memory Size:** 4 Mbit (512Kb x8)  
- **Supply Voltage:** 2.7V to 3.6V  
- **Access Time:** 80 ns  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** TSOP48 (Thin Small Outline Package, 48 pins)  
- **Interface:** Parallel  
- **Sector Architecture:** Uniform 64Kb sectors  
- **Endurance:** 100,000 write/erase cycles per sector  
- **Data Retention:** 20 years  

### **Features:**  
- **Low Power Consumption:**  
  - Active Read Current: 15 mA (typical)  
  - Standby Current: 10 µA (typical)  
- **Fast Erase and Programming:**  
  - Sector Erase Time: 1 second (typical)  
  - Byte Programming Time: 20 µs (typical)  
- **Hardware and Software Data Protection:**  
  - Block protection/unprotection via control pins  
  - Embedded algorithms for secure data handling  
- **Compatibility:**  
  - JEDEC-standard commands  
  - Backward-compatible with older Flash memory devices  

This part is commonly used in embedded systems, automotive electronics, and industrial applications where reliable non-volatile storage is required.  

(Source: STMicroelectronics datasheet)

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