16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM The **M27V160-100F1** is a **16 Mbit (2M x 8-bit or 1M x 16-bit) CMOS UV EPROM** manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Density:** 16 Mbit (2M x 8-bit or 1M x 16-bit)
- **Supply Voltage (VCC):** 5V ± 10%
- **Access Time:** 100 ns
- **Operating Temperature Range:** -40°C to +85°C
- **Package:** 44-lead PLCC (Plastic Leaded Chip Carrier)
- **Technology:** CMOS UV EPROM (Erasable Programmable Read-Only Memory)
- **Erase Method:** Ultraviolet (UV) light exposure (minimum 15 W-sec/cm²)
- **Programming Voltage (VPP):** 12.5V
### **Descriptions:**
- The **M27V160-100F1** is a high-density EPROM designed for applications requiring non-volatile memory storage.
- It supports both **8-bit and 16-bit configurations**, making it versatile for different system architectures.
- Data retention is **guaranteed for 10 years** after programming.
- The memory is organized as **2,097,152 x 8 bits or 1,048,576 x 16 bits**.
### **Features:**
- **Fast access time (100 ns)** for high-performance applications.
- **Low power consumption** (30 mA active current, 100 µA standby current).
- **CMOS technology** for improved power efficiency.
- **JEDEC-approved pinout** for compatibility with industry standards.
- **Programmable and erasable** using standard EPROM programmers and UV erasers.
- **On-chip address and data latches** for easy interfacing with microprocessors.
- **Three-state outputs** for bus-oriented systems.
This device is commonly used in embedded systems, industrial controls, and legacy computing applications requiring reprogrammable non-volatile memory.
