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M27C801-55K1 from ST,ST Microelectronics

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M27C801-55K1

Manufacturer: ST

8 MBIT (1MB X 8) UV EPROM AND OTP EPROM

Partnumber Manufacturer Quantity Availability
M27C801-55K1,M27C80155K1 ST 585 In Stock

Description and Introduction

8 MBIT (1MB X 8) UV EPROM AND OTP EPROM The **M27C801-55K1** is a UV-erasable and electrically programmable read-only memory (EPROM) manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Memory Size:** 1 Megabit (128K x 8 bits)  
- **Access Time:** 55 ns  
- **Supply Voltage:** 5V ±10%  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin DIP (Dual In-line Package)  
- **Technology:** CMOS  
- **UV Erase Time:** 15-20 minutes (under UV light)  
- **Data Retention:** 10 years minimum  

### **Features:**  
- **Low Power Consumption:**  
  - Active current: 30 mA (max)  
  - Standby current: 100 µA (max)  
- **Fast Programming Algorithm:**  
  - Supports fast programming with intelligent algorithms  
- **High Reliability:**  
  - Endurance: 100 programming cycles (typical)  
- **Compatibility:**  
  - JEDEC-approved pinout  
  - Compatible with industry-standard EPROM programmers  

### **Applications:**  
- Firmware storage in embedded systems  
- Microcontroller program memory  
- Legacy computing and industrial control systems  

This EPROM is designed for applications requiring non-volatile memory with reprogrammability via UV erasure.

Partnumber Manufacturer Quantity Availability
M27C801-55K1,M27C80155K1 STMICRO 600 In Stock

Description and Introduction

8 MBIT (1MB X 8) UV EPROM AND OTP EPROM The **M27C801-55K1** is a UV-erasable and electrically programmable read-only memory (EPROM) manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Memory Size:** 1 Megabit (128K x 8 bits)  
- **Access Time:** 55 ns  
- **Supply Voltage:** 5V ± 10%  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin ceramic DIP (Dual In-line Package)  
- **Technology:** CMOS for low power consumption  
- **UV Erasable:** Requires exposure to UV light for data erasure (typically 15-30 minutes)  
- **Programming Voltage:** 12.5V (VPP)  

### **Features:**  
- **High Reliability:** Endurance of 100 write/erase cycles  
- **Low Power Consumption:**  
  - Active current: 30 mA (max)  
  - Standby current: 100 µA (max)  
- **Compatibility:** TTL-compatible inputs and outputs  
- **Data Retention:** 10 years minimum  

### **Applications:**  
- Embedded systems  
- Firmware storage  
- Legacy industrial and computing devices  

This EPROM is designed for applications requiring non-volatile memory with reprogramming capability via UV erasure.

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