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MTD10N10EL from ON,ON Semiconductor

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MTD10N10EL

Manufacturer: ON

TMOS Power FET

Partnumber Manufacturer Quantity Availability
MTD10N10EL ON 70 In Stock

Description and Introduction

TMOS Power FET # Introduction to the MTD10N10EL MOSFET  

The MTD10N10EL is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of 10A, this component is well-suited for power management in DC-DC converters, motor control circuits, and other high-performance electronic systems.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the MTD10N10EL minimizes power losses, improving overall system efficiency. Its robust construction ensures reliable operation in demanding environments, making it a preferred choice for industrial and automotive applications.  

The MOSFET is housed in a TO-252 (DPAK) package, offering a compact footprint while maintaining excellent thermal performance. This package design facilitates efficient heat dissipation, enhancing the device's durability under high-load conditions.  

Engineers often select the MTD10N10EL for its balance of performance, cost-effectiveness, and reliability. Whether used in power supplies, inverters, or load-switching circuits, this MOSFET provides consistent performance, making it a versatile solution for modern electronic designs.  

For detailed specifications, always refer to the manufacturer's datasheet to ensure proper integration into your circuit.

Application Scenarios & Design Considerations

TMOS Power FET

Alternative Part Number

  • IRF530NPBF --: 100V N-channel MOSFET in TO-220 with comparable RDS(on) and current rating, widely available and pin-compatible.
  • STP16NF06 --: 60V logic-level N-channel MOSFET in TO-220, suitable drop-in for low-voltage switching applications.
  • FQP13N10 --: 100V N-channel MOSFET in TO-220 from the same manufacturer family, similar voltage and current ratings.

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