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MT28F016S5VG-9 from MT

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MT28F016S5VG-9

Manufacturer: MT

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

Partnumber Manufacturer Quantity Availability
MT28F016S5VG-9,MT28F016S5VG9 MT 10000 In Stock

Description and Introduction

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY **Introduction to the MT28F016S5VG-9 Flash Memory Component**  

The MT28F016S5VG-9 is a high-performance 16-megabit (2M x 8-bit) flash memory component designed for applications requiring reliable, non-volatile data storage. Built with advanced CMOS technology, this device offers fast read and write operations, making it suitable for embedded systems, industrial controls, and communication equipment.  

Operating at a voltage range of 4.5V to 5.5V, the MT28F016S5VG-9 features a 70ns access time, ensuring efficient data retrieval. Its block-erasable architecture allows for flexible memory management, supporting both uniform and non-uniform sector configurations. The component is compatible with standard microprocessor interfaces, simplifying integration into existing designs.  

Key features include a low-power standby mode, hardware and software data protection mechanisms, and extended endurance with a typical lifespan of 100,000 program/erase cycles. The MT28F016S5VG-9 also incorporates error correction and wear-leveling algorithms, enhancing data integrity in demanding environments.  

Available in a 44-pin TSOP package, this flash memory component is designed for space-constrained applications while maintaining robust performance. Its industrial-grade temperature range (-40°C to +85°C) ensures reliable operation in harsh conditions.  

Engineers and developers seeking a dependable, high-speed flash memory solution will find the MT28F016S5VG-9 a practical choice for both legacy and modern systems requiring stable, long-term data storage.

Application Scenarios & Design Considerations

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

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