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M68AW128ML55ND6 from ST,ST Microelectronics

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M68AW128ML55ND6

Manufacturer: ST

2 Mbit (128K x16) 3.0V Asynchronous SRAM

Partnumber Manufacturer Quantity Availability
M68AW128ML55ND6 ST 2000 In Stock

Description and Introduction

2 Mbit (128K x16) 3.0V Asynchronous SRAM The **M68AW128ML55ND6** is a memory module manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Memory Type:** NOR Flash  
- **Density:** 128 Mbit (16 MB)  
- **Interface:** Parallel  
- **Supply Voltage:** 3.0V - 3.6V  
- **Operating Temperature Range:** -40°C to +85°C  
- **Access Time:** 55 ns  
- **Organization:** 16M x 8 or 8M x 16  
- **Package:** BGA (Ball Grid Array)  

### **Descriptions:**  
- The **M68AW128ML55ND6** is a high-performance **NOR Flash memory** designed for embedded systems requiring fast read operations.  
- It supports both **asynchronous and burst read modes** for efficient data access.  
- The device is compatible with **3.3V systems** and features a **low-power standby mode**.  

### **Features:**  
- **Fast access time (55 ns)** for high-speed applications.  
- **Sector Erase Architecture:** Supports **uniform 64 KB sectors** for flexible memory management.  
- **Hardware and Software Data Protection:** Includes **block locking** and **password protection** features.  
- **Extended Temperature Range:** Suitable for industrial and automotive applications.  
- **Reliable Data Retention:** Up to **20 years** at 85°C.  

This information is based on ST's official documentation for the **M68AW128ML55ND6** NOR Flash memory module.

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