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M5M5256DP-55XL from MIT

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M5M5256DP-55XL

Manufacturer: MIT

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
M5M5256DP-55XL,M5M5256DP55XL MIT 2000 In Stock

Description and Introduction

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM The part **M5M5256DP-55XL** is a **CMOS 262,144-Word × 4-Bit Full CMOS Static RAM (SRAM)** manufactured by **Mitsubishi (MIT)**.  

### **Key Specifications:**  
- **Organization:** 262,144 words × 4 bits  
- **Technology:** Full CMOS  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 55 ns  
- **Package:** Typically available in a **DIP (Dual In-line Package)** or similar through-hole package.  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant.  
- **Standby Current:** Low power consumption in standby mode due to CMOS technology.  

### **Features:**  
- **High-Speed Operation:** 55 ns access time suitable for various computing applications.  
- **Low Power Consumption:** CMOS technology ensures reduced power usage.  
- **Wide Operating Voltage Range:** Supports standard 5V systems.  
- **Fully Static Operation:** No refresh cycles required.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with standard logic levels.  

This SRAM was commonly used in older computing systems, embedded applications, and industrial electronics requiring fast, low-power memory.  

(Note: For exact pinout, package dimensions, or detailed electrical characteristics, refer to the official Mitsubishi datasheet.)

Application Scenarios & Design Considerations

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

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