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M5M44265CTP-7 from MIT

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M5M44265CTP-7

Manufacturer: MIT

EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

Partnumber Manufacturer Quantity Availability
M5M44265CTP-7,M5M44265CTP7 MIT 3360 In Stock

Description and Introduction

EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM The part **M5M44265CTP-7** is a **4Mbit (256K x 16) CMOS Pseudo Static RAM (PSRAM)** manufactured by **Mitsubishi (MIT)**.  

### **Key Specifications:**  
- **Density:** 4Mbit (256K words × 16 bits)  
- **Organization:** 262,144 words × 16 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Access Time:** 70ns  
- **Package Type:** TSOP (Thin Small Outline Package)  
- **Operating Temperature:** Commercial (0°C to +70°C)  
- **Refresh Mechanism:** Internal self-refresh (pseudo-static operation)  
- **Interface:** Asynchronous  

### **Features:**  
- **Low Power Consumption:**  
  - Standby current: 10µA (typical)  
  - Operating current: 25mA (typical at 70ns access time)  
- **Single 3.3V Power Supply**  
- **Compatible with Standard SRAM Pinout**  
- **No External Refresh Required** (internal refresh control)  
- **CMOS Technology for High Speed and Low Power**  
- **Wide Operating Temperature Range** (commercial grade)  

This PSRAM is designed for applications requiring high-density, low-power memory with SRAM-like ease of use, such as embedded systems, networking, and portable electronics.  

Would you like additional details on pin configuration or timing characteristics?

Application Scenarios & Design Considerations

EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

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