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M59DR008F from ST,ST Microelectronics

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M59DR008F

Manufacturer: ST

8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY

Partnumber Manufacturer Quantity Availability
M59DR008F ST 156 In Stock

Description and Introduction

8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY The **M59DR008F** is a 8 Mbit (1M x 8) low-power, high-speed Flash memory device manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Density:** 8 Mbit (1M x 8)  
- **Voltage Supply:**  
  - **VCC:** 2.7V to 3.6V (Single Voltage)  
- **Access Time:** 70 ns  
- **Operating Current:**  
  - **Read:** 15 mA (typical)  
  - **Program/Erase:** 30 mA (typical)  
- **Standby Current:** 1 µA (typical)  
- **Sector Architecture:**  
  - **Uniform Sectors:** 16 sectors of 64 KB each  
  - **Additional Small Sectors:** 8 sectors of 4 KB each  
- **Endurance:**  
  - **100,000 Program/Erase Cycles per Sector**  
- **Data Retention:** **20 Years**  
- **Interface:** **Parallel (x8)**  
- **Package Options:**  
  - **TSOP48 (12x20mm)**  
  - **SO44 (PLCC-like footprint)**  

### **Features:**  
- **Low-Power Consumption** (ideal for battery-powered applications)  
- **Fast Erase and Program Time**  
  - **Chip Erase:** 5 seconds (typical)  
  - **Sector Erase:** 0.7 seconds (typical)  
  - **Byte Program:** 20 µs (typical)  
- **Hardware and Software Data Protection**  
- **Compatible with JEDEC Standards**  
- **Extended Temperature Range:**  
  - **Industrial (-40°C to +85°C)**  
  - **Automotive (-40°C to +125°C) (specific variants)**  

This Flash memory is commonly used in embedded systems, automotive electronics, and industrial applications where reliable non-volatile storage is required.

Application Scenarios & Design Considerations

8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY

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