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M58WR064FB70ZB6T from STM,ST Microelectronics

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M58WR064FB70ZB6T

Manufacturer: STM

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

Partnumber Manufacturer Quantity Availability
M58WR064FB70ZB6T STM 2582 In Stock

Description and Introduction

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory The **M58WR064FB70ZB6T** is a flash memory device manufactured by **STMicroelectronics (STM)**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**
- **Memory Type:** NOR Flash  
- **Density:** 64 Mbit (8 MB)  
- **Interface:** Parallel (x8/x16)  
- **Supply Voltage:** 2.7V - 3.6V  
- **Operating Temperature Range:** -40°C to +85°C  
- **Speed:** 70 ns access time  
- **Sector Architecture:** Uniform 64 KB sectors  
- **Package:** FBGA (Fine-Pitch Ball Grid Array)  
- **Data Retention:** Up to 20 years  
- **Endurance:** 100,000 write/erase cycles per sector  

### **Descriptions:**
- The **M58WR064FB70ZB6T** is a high-performance NOR Flash memory designed for embedded systems requiring fast read operations and reliable data storage.  
- It supports both **byte (x8)** and **word (x16)** configurations.  
- Features a **uniform sector architecture**, making it suitable for code storage and execution in place (XIP).  

### **Features:**
- **Low Power Consumption:** Optimized for battery-powered applications.  
- **Hardware Data Protection:** Includes block locking and password protection.  
- **Software Command Set:** Compatible with JEDEC standards.  
- **Embedded Algorithms:** Supports erase and program operations.  
- **Reliable Performance:** High endurance and long data retention.  

This information is strictly based on available specifications from **STMicroelectronics**. For further details, refer to the official datasheet.

Application Scenarios & Design Considerations

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

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