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M57962L. from MIT

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M57962L.

Manufacturer: MIT

HYBRID IC FOR DRIVING IGBT MODULES

Partnumber Manufacturer Quantity Availability
M57962L.,M57962L MIT 22 In Stock

Description and Introduction

HYBRID IC FOR DRIVING IGBT MODULES The part M57962L is manufactured by MIT (Mitsubishi Electric).  

### Specifications:  
- **Type**: IGBT (Insulated Gate Bipolar Transistor) Driver Module  
- **Input Current**: 16mA (max)  
- **Supply Voltage (VCC)**: +15V ±10%  
- **Supply Voltage (VEE)**: -10V ±10%  
- **Output Current (Peak)**: ±5A  
- **Isolation Voltage**: 2500Vrms (min)  
- **Operating Temperature Range**: -20°C to +70°C  
- **Storage Temperature Range**: -40°C to +100°C  

### Descriptions and Features:  
- Designed for driving IGBTs in high-power applications.  
- Includes built-in short-circuit protection.  
- High-speed switching capability.  
- Optically isolated input for noise immunity.  
- Compact and robust module design.  
- Suitable for industrial inverters, motor drives, and power supplies.  

For detailed technical parameters, refer to the official datasheet from Mitsubishi Electric.

Application Scenarios & Design Considerations

HYBRID IC FOR DRIVING IGBT MODULES

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