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M52S32162A-10BG from EMST

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M52S32162A-10BG

Manufacturer: EMST

1M x 16Bit x 2Banks Mobile Synchronous DRAM

Partnumber Manufacturer Quantity Availability
M52S32162A-10BG,M52S32162A10BG EMST 3190 In Stock

Description and Introduction

1M x 16Bit x 2Banks Mobile Synchronous DRAM The part **M52S32162A-10BG** is a **32Mbit (2M x 16) Synchronous DRAM (SDRAM)** manufactured by **EMST**.  

### **Key Specifications:**  
- **Density:** 32Mbit (2M words × 16 bits)  
- **Organization:** 2 banks × 1,048,576 words × 16 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed:** 10ns (100MHz)  
- **Package:** 54-pin TSOP-II  
- **Refresh:** 4,096 refresh cycles / 64ms  
- **Burst Length:** 1, 2, 4, 8, or full page  
- **CAS Latency:** 2 or 3  

### **Features:**  
- Fully synchronous operation  
- Internal pipelined architecture  
- Auto Refresh (CBR) and Self Refresh modes  
- Programmable burst read/write operations  
- Single 3.3V power supply  
- LVTTL-compatible inputs/outputs  

This SDRAM is designed for high-performance memory applications requiring fast data access and low power consumption.

Application Scenarios & Design Considerations

1M x 16Bit x 2Banks Mobile Synchronous DRAM
Partnumber Manufacturer Quantity Availability
M52S32162A-10BG,M52S32162A10BG ESMT 1000 In Stock

Description and Introduction

1M x 16Bit x 2Banks Mobile Synchronous DRAM The M52S32162A-10BG is a memory module manufactured by Elite Semiconductor Memory Technology Inc. (ESMT). Below are its specifications, descriptions, and features based on factual data:

### **Specifications:**
- **Manufacturer:** ESMT (Elite Semiconductor Memory Technology Inc.)  
- **Part Number:** M52S32162A-10BG  
- **Memory Type:** Synchronous DRAM (SDRAM)  
- **Density:** 32M x 16 (512Mbit)  
- **Organization:** 4 Banks x 4M words x 16 bits  
- **Speed:** 10ns (100MHz)  
- **Voltage:** 3.3V ± 0.3V  
- **Interface:** LVTTL  
- **Package:** 54-pin TSOP-II  

### **Descriptions:**
- The M52S32162A-10BG is a high-speed CMOS synchronous DRAM designed for applications requiring high bandwidth and low power consumption.  
- It operates with a fully synchronous pipeline architecture, supporting burst read and write operations.  
- The module is commonly used in networking, telecommunications, and embedded systems.  

### **Features:**
- **Clock Frequency:** 100MHz (10ns access time)  
- **Burst Length:** 1, 2, 4, 8, or full-page  
- **CAS Latency:** Programmable (2 or 3 cycles)  
- **Auto Refresh & Self Refresh:** Supported  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Low Power Consumption:** Standby and active power-saving modes  
- **Compliant with JEDEC Standards**  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

1M x 16Bit x 2Banks Mobile Synchronous DRAM

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