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MC2836 from DIODES

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MC2836

Manufacturer: DIODES

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE

Partnumber Manufacturer Quantity Availability
MC2836 DIODES 2815 In Stock

Description and Introduction

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE The MC2836 is a product manufactured by DIODES Incorporated. It is a low-power, high-performance voltage regulator designed for use in various electronic applications.  

### **Specifications:**  
- **Input Voltage Range:** Up to 40V  
- **Output Voltage Options:** Fixed (e.g., 5V, 12V) or adjustable  
- **Output Current:** Up to 100mA  
- **Low Dropout Voltage:** Ensures efficient operation with minimal power loss  
- **Low Quiescent Current:** Enhances power efficiency in battery-operated devices  
- **Thermal Shutdown Protection:** Prevents damage from overheating  
- **Short-Circuit Protection:** Safeguards the device from output faults  

### **Descriptions and Features:**  
- The MC2836 is a linear voltage regulator suitable for low-power applications.  
- It provides stable voltage regulation with minimal external components.  
- Designed for reliability in automotive, industrial, and consumer electronics.  
- Available in compact packages such as SOT-23 or TO-92 for space-constrained designs.  
- Operates over a wide temperature range, making it suitable for harsh environments.  

For exact technical details, refer to the official datasheet from DIODES Incorporated.

Application Scenarios & Design Considerations

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE
Partnumber Manufacturer Quantity Availability
MC2836 MITSUBISHI 12100 In Stock

Description and Introduction

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE The MC2836 is a semiconductor device manufactured by **Mitsubishi**.  

### **Specifications:**  
- **Type:** RF Power Transistor  
- **Material:** Silicon (Si)  
- **Package:** TO-220  
- **Polarity:** NPN  
- **Application:** RF Amplification  

### **Descriptions:**  
- Designed for **VHF/UHF** power amplification.  
- Suitable for **linear and nonlinear** RF applications.  
- High power gain and efficiency.  

### **Features:**  
- High **output power** capability.  
- Excellent **thermal stability**.  
- Low **intermodulation distortion**.  
- Optimized for **50-ohm systems**.  

For exact electrical characteristics, refer to the official datasheet.

Application Scenarios & Design Considerations

FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE

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