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M48Z35Y-70MH1F from ST,ST Microelectronics

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M48Z35Y-70MH1F

Manufacturer: ST

256 Kbit (32Kbit X 8) ZEROPOWER SRAM

Partnumber Manufacturer Quantity Availability
M48Z35Y-70MH1F,M48Z35Y70MH1F ST 2500 In Stock

Description and Introduction

256 Kbit (32Kbit X 8) ZEROPOWER SRAM The **M48Z35Y-70MH1F** is a non-volatile SRAM (nvSRAM) manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Memory Type:** Non-Volatile SRAM (nvSRAM)  
- **Density:** 512 Kb (64K × 8 bits)  
- **Access Time:** 70 ns  
- **Supply Voltage:** 4.5V to 5.5V  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 28-pin SOIC (MH1F)  
- **Data Retention:** 10 years minimum (non-volatile storage)  
- **Write Endurance:** Unlimited (SRAM), 1 million cycles (EEPROM backup)  

### **Descriptions:**  
- Combines SRAM speed with non-volatile EEPROM backup.  
- Automatically stores SRAM data to EEPROM during power loss.  
- Restores data to SRAM upon power-up.  
- Suitable for applications requiring fast write speeds and non-volatility.  

### **Features:**  
- **Zero Write Delay** – No delay when writing to SRAM.  
- **Automatic Store & Recall** – Data transfer between SRAM and EEPROM during power transitions.  
- **High Reliability** – Built-in EEPROM ensures data integrity.  
- **Industrial-Grade** – Operates in harsh environments (-40°C to +85°C).  
- **Battery-Free Operation** – No external battery required for data retention.  

This information is sourced from STMicroelectronics' official documentation.

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