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L8050QLT1 from ON,ON Semiconductor

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L8050QLT1

Manufacturer: ON

General Purpose Transistors NPN Silicon

Partnumber Manufacturer Quantity Availability
L8050QLT1 ON 10247 In Stock

Description and Introduction

General Purpose Transistors NPN Silicon The part **L8050QLT1** is manufactured by **ON Semiconductor**.  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Voltage - Collector Emitter Breakdown (VCEO):** -25V  
- **Current - Collector (Ic):** -500mA  
- **Power Dissipation (Pd):** 625mW  
- **DC Current Gain (hFE):** 120 (min) @ 150mA, 5V  
- **Frequency - Transition (fT):** 100MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (TO-236-3, SC-59)  

### **Descriptions:**  
The **L8050QLT1** is a general-purpose PNP transistor designed for amplification and switching applications. It features high current gain, low saturation voltage, and fast switching speeds.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- Suitable for small-signal amplification  
- Compact SOT-23 package for space-constrained designs  

For detailed datasheets, refer to ON Semiconductor's official documentation.

Application Scenarios & Design Considerations

General Purpose Transistors NPN Silicon
Partnumber Manufacturer Quantity Availability
L8050QLT1 LRC 5600 In Stock

Description and Introduction

General Purpose Transistors NPN Silicon The L8050QLT1 is a semiconductor component manufactured by LRC (Leshan Radio Company). Here are the specifications, descriptions, and features based on factual information:

### **Specifications:**  
- **Type:** NPN Silicon Epitaxial Planar Transistor  
- **Collector-Emitter Voltage (VCEO):** 50V  
- **Collector-Base Voltage (VCBO):** 60V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 1.5A  
- **Total Power Dissipation (PTOT):** 1W  
- **Junction Temperature (TJ):** 150°C  
- **Storage Temperature (TSTG):** -55°C to +150°C  

### **Descriptions:**  
- Designed for general-purpose amplification and switching applications.  
- Encapsulated in a TO-92 package.  
- Suitable for low-power circuits.  

### **Features:**  
- High current gain (hFE) with low saturation voltage.  
- Fast switching speed.  
- Reliable performance in various electronic applications.  

For detailed datasheet information, refer to the official LRC documentation.

Application Scenarios & Design Considerations

General Purpose Transistors NPN Silicon

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