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LM5111-1MYX from NS,National Semiconductor

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LM5111-1MYX

Manufacturer: NS

LM5111 Dual 5A Compound Gate Driver

Partnumber Manufacturer Quantity Availability
LM5111-1MYX,LM51111MYX NS 325 In Stock

Description and Introduction

LM5111 Dual 5A Compound Gate Driver The LM5111-1MYX is a high-voltage gate driver manufactured by Texas Instruments (NS). Here are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Texas Instruments (NS)  
- **Type:** High-Voltage Gate Driver  
- **Output Current (Source/Sink):** 5A / 5A  
- **Supply Voltage (VDD):** 5V to 14V  
- **Maximum Bootstrap Voltage (VBST):** 118V  
- **Propagation Delay (Typical):** 30ns  
- **Rise/Fall Time (10% to 90%):** 10ns / 8ns (with 1nF load)  
- **Operating Temperature Range:** -40°C to +125°C  
- **Package:** 8-Pin SOIC (MY)  

### **Descriptions:**  
- The LM5111-1MYX is designed to drive both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations.  
- It features a bootstrap diode for high-side drive and includes under-voltage lockout (UVLO) protection.  
- The device is optimized for high-frequency switching applications.  

### **Features:**  
- **Independent High-Side and Low-Side Gate Drive Outputs**  
- **5A Peak Output Current**  
- **Wide Operating Voltage Range (5V to 14V)**  
- **Fast Propagation Delay (30ns typical)**  
- **Integrated Bootstrap Diode**  
- **Under-Voltage Lockout (UVLO) Protection**  
- **Compatible with TTL and CMOS Inputs**  
- **Low Power Consumption**  

This information is strictly factual based on the manufacturer's datasheet. Let me know if you need further details.

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