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LBC848ALT1G from LRC

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LBC848ALT1G

Manufacturer: LRC

General Purpose Transistors NPN Silicon

Partnumber Manufacturer Quantity Availability
LBC848ALT1G LRC 42000 In Stock

Description and Introduction

General Purpose Transistors NPN Silicon The LBC848ALT1G is a general-purpose NPN/PNP transistor pair manufactured by ON Semiconductor. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
ON Semiconductor  

### **Part Number:**  
LBC848ALT1G  

### **Description:**  
The LBC848ALT1G is a dual NPN/PNP transistor housed in a SOT-23 package. It is designed for general-purpose amplification and switching applications.  

### **Key Features:**  
- **Transistor Type:** Dual NPN/PNP  
- **Package:** SOT-23  
- **NPN Transistor (Q1) Specifications:**  
  - Collector-Emitter Voltage (VCEO): 30V  
  - Collector-Base Voltage (VCBO): 30V  
  - Emitter-Base Voltage (VEBO): 5V  
  - Continuous Collector Current (IC): 100mA  
  - Total Power Dissipation (PD): 225mW  
  - DC Current Gain (hFE): 100 to 300 (IC = 2mA, VCE = 5V)  
  - Transition Frequency (fT): 100MHz (IC = 10mA, VCE = 5V)  

- **PNP Transistor (Q2) Specifications:**  
  - Collector-Emitter Voltage (VCEO): -30V  
  - Collector-Base Voltage (VCBO): -30V  
  - Emitter-Base Voltage (VEBO): -5V  
  - Continuous Collector Current (IC): -100mA  
  - Total Power Dissipation (PD): 225mW  
  - DC Current Gain (hFE): 100 to 300 (IC = -2mA, VCE = -5V)  
  - Transition Frequency (fT): 80MHz (IC = -10mA, VCE = -5V)  

### **Applications:**  
- Signal amplification  
- Switching circuits  
- General-purpose transistor pair applications  

### **Operating Temperature Range:**  
- **Storage Temperature:** -55°C to +150°C  
- **Junction Temperature:** 150°C  

This information is based on the manufacturer's datasheet and technical specifications.

Application Scenarios & Design Considerations

General Purpose Transistors NPN Silicon

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