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LBC807-25LT1G from LRC

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LBC807-25LT1G

Manufacturer: LRC

General Purpose Transistors PNP Silicon

Partnumber Manufacturer Quantity Availability
LBC807-25LT1G,LBC80725LT1G LRC 300000 In Stock

Description and Introduction

General Purpose Transistors PNP Silicon The **LBC807-25LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.  

### **Key Specifications:**  
- **Type:** PNP Transistor  
- **Collector-Base Voltage (VCBO):** -45V  
- **Collector-Emitter Voltage (VCEO):** -25V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -500mA  
- **Power Dissipation (PD):** 300mW  
- **DC Current Gain (hFE):** 160 to 400 (at IC = -100mA, VCE = -1V)  
- **Transition Frequency (fT):** 100MHz  
- **Package:** SOT-23 (3-Lead)  

### **Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain (hFE) with low saturation voltage.  
- Suitable for low-power applications.  
- RoHS compliant and lead-free.  

### **Applications:**  
- Signal amplification  
- Switching circuits  
- Driver stages in audio and RF circuits  

This transistor is commonly used in portable electronics, consumer devices, and industrial control systems.  

Would you like any additional details?

Application Scenarios & Design Considerations

General Purpose Transistors PNP Silicon
Partnumber Manufacturer Quantity Availability
LBC807-25LT1G,LBC80725LT1G ON 3000 In Stock

Description and Introduction

General Purpose Transistors PNP Silicon The **LBC807-25LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.  

### **Specifications:**  
- **Transistor Type:** PNP  
- **Collector-Base Voltage (VCBO):** -45V  
- **Collector-Emitter Voltage (VCEO):** -25V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -500mA  
- **Power Dissipation (PD):** 225mW  
- **DC Current Gain (hFE):** 100-250 (at IC = -100mA, VCE = -1V)  
- **Transition Frequency (fT):** 100MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Package:**  
- **SOT-23 (TO-236AB)** (3-pin surface-mount package)  

### **Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain bandwidth product.  
- Low saturation voltage.  
- Suitable for automated placement.  

### **Applications:**  
- Signal amplification.  
- Switching circuits.  
- Driver stages in audio and RF applications.  

For detailed electrical characteristics, refer to the official datasheet from ON Semiconductor.

Application Scenarios & Design Considerations

General Purpose Transistors PNP Silicon

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