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LBAV99WT1G from LRC

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LBAV99WT1G

Manufacturer: LRC

Dual Serise Switching Diodes

Partnumber Manufacturer Quantity Availability
LBAV99WT1G LRC 90000 In Stock

Description and Introduction

Dual Serise Switching Diodes The LBAV99WT1G is a high-speed switching diode manufactured by ON Semiconductor. Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** ON Semiconductor  
- **Type:** Dual Common Cathode Switching Diode  
- **Package:** SOT-323 (SC-70)  
- **Maximum Reverse Voltage (VR):** 75V  
- **Forward Continuous Current (IF):** 200mA  
- **Peak Forward Surge Current (IFSM):** 500mA (pulse width = 1μs)  
- **Forward Voltage (VF):** 1V (at 10mA)  
- **Reverse Recovery Time (trr):** 4ns (typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Descriptions:**  
- The LBAV99WT1G consists of two diodes connected in a common cathode configuration.  
- It is designed for high-speed switching applications.  
- The small SOT-323 package makes it suitable for space-constrained designs.  

### **Features:**  
- **High-Speed Switching:** Low reverse recovery time (4ns typical).  
- **Low Leakage Current:** Ensures efficient performance.  
- **Common Cathode Configuration:** Simplifies circuit design in certain applications.  
- **Small Form Factor:** SOT-323 package for compact PCB layouts.  
- **RoHS Compliant:** Meets environmental standards.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Dual Serise Switching Diodes
Partnumber Manufacturer Quantity Availability
LBAV99WT1G ON 2068 In Stock

Description and Introduction

Dual Serise Switching Diodes The LBAV99WT1G is a Schottky Barrier Diode (SBD) manufactured by ON Semiconductor.  

**Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Package:** SOD-123  
- **Maximum Reverse Voltage (VR):** 40V  
- **Average Rectified Current (IO):** 200mA  
- **Forward Voltage Drop (VF):** 0.38V (at 100mA)  
- **Reverse Leakage Current (IR):** 0.5µA (at 25°C, VR = 40V)  
- **Operating Temperature Range:** -65°C to +125°C  

**Features:**  
- Low forward voltage drop  
- High switching speed  
- Low leakage current  
- Small surface-mount package (SOD-123)  

**Applications:**  
- High-frequency rectification  
- Reverse polarity protection  
- Switching circuits  

This diode is designed for efficient power management in compact electronic devices.

Application Scenarios & Design Considerations

Dual Serise Switching Diodes

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