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LAT676 from OSRAM

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LAT676

Manufacturer: OSRAM

Hyper TOPLED Hyper-Bright LED

Partnumber Manufacturer Quantity Availability
LAT676 OSRAM 200000 In Stock

Description and Introduction

Hyper TOPLED Hyper-Bright LED The LAT676 is a light-emitting diode (LED) manufactured by OSRAM. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** LED (Light Emitting Diode)  
- **Color:** Typically red (exact wavelength depends on variant)  
- **Package:** SMD (Surface Mount Device)  
- **Forward Voltage (Vf):** ~2V (varies by model)  
- **Forward Current (If):** 20mA (standard)  
- **Luminous Intensity:** Varies by model (check datasheet for exact value)  
- **Viewing Angle:** ~120° (typical for SMD LEDs)  
- **Operating Temperature Range:** -40°C to +85°C (may vary)  

### **Descriptions:**  
- The LAT676 is a compact, surface-mount LED designed for general lighting and indicator applications.  
- It is commonly used in automotive lighting, consumer electronics, and industrial displays.  
- The LED provides high brightness with low power consumption.  

### **Features:**  
- **Energy Efficient:** Low power consumption with high luminous output.  
- **Long Lifespan:** Durable design with extended operational life.  
- **Compact Size:** Small SMD package suitable for space-constrained applications.  
- **Wide Viewing Angle:** Uniform light distribution.  
- **RoHS Compliant:** Meets environmental standards.  

For exact technical details, refer to the official OSRAM LAT676 datasheet.

Partnumber Manufacturer Quantity Availability
LAT676 8000 In Stock

Description and Introduction

Hyper TOPLED Hyper-Bright LED The **LAT676** is a **high-performance NPN bipolar junction transistor (BJT)** designed for **RF and microwave applications**.  

### **Manufacturer Specifications:**  
- **Manufacturer:** STMicroelectronics  
- **Type:** NPN RF Transistor  
- **Package:** SOT-23 (Surface Mount)  
- **Maximum Frequency (fT):** 7 GHz  
- **Maximum Collector Current (Ic):** 50 mA  
- **Maximum Collector-Emitter Voltage (Vce):** 12 V  
- **Maximum Power Dissipation (Pd):** 250 mW  
- **Noise Figure (NF):** Low noise for RF applications  
- **Gain (hFE):** Typically high for amplification purposes  

### **Descriptions and Features:**  
- Designed for **low-noise amplification** in **RF and microwave circuits**.  
- Suitable for **VHF, UHF, and microwave frequency bands**.  
- **High transition frequency (fT)** enables efficient high-frequency operation.  
- **Small SOT-23 package** allows for compact PCB designs.  
- Used in applications such as **RF amplifiers, oscillators, and mixers**.  
- **Low power consumption** makes it ideal for portable and battery-operated devices.  

For exact performance characteristics, refer to the **official datasheet** from STMicroelectronics.

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