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KP4N12 from SHINDENGEN

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KP4N12

Manufacturer: SHINDENGEN

TSS KP Series

Partnumber Manufacturer Quantity Availability
KP4N12 SHINDENGEN 1500 In Stock

Description and Introduction

TSS KP Series The KP4N12 is a power MOSFET manufactured by SHINDENGEN. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 400V  
- **Continuous Drain Current (ID):** 4A  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 40ns (typical)  
- **Package:** TO-220F (isolated type)  

### **Descriptions:**
- The KP4N12 is designed for high-voltage, high-speed switching applications.  
- It features low on-resistance and fast switching performance.  
- The TO-220F package provides thermal efficiency and electrical isolation.  

### **Features:**
- **High Voltage Capability:** 400V drain-source voltage rating.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Isolated Package:** TO-220F ensures electrical isolation for improved safety.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load conditions.  

This information is based solely on the manufacturer's provided data.

Partnumber Manufacturer Quantity Availability
KP4N12 1500 In Stock

Description and Introduction

TSS KP Series The KP4N12 is a power MOSFET transistor. Here are its key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **STMicroelectronics**  

### **Specifications:**  
- **Type:** N-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 4A  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 25W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.45Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 150pF (typical)  
- **Package:** TO-220 (Through-Hole Mounting)  

### **Descriptions & Features:**  
- Designed for **switching applications** in power supplies, motor control, and DC-DC converters.  
- **Low gate charge** for fast switching performance.  
- **Avalanche ruggedness** ensures reliability in inductive load applications.  
- **Low on-resistance** improves efficiency in power conversion.  
- **Standard TO-220 package** for easy mounting and heat dissipation.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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