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KHB4D5N60P from KEC

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KHB4D5N60P

Manufacturer: KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
KHB4D5N60P KEC 10000 In Stock

Description and Introduction

N CHANNEL MOS FIELD EFFECT TRANSISTOR The part **KHB4D5N60P** is manufactured by **KEC (Korea Electronics Company)**.  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage Rating (VDSS):** 600V  
- **Current Rating (ID):** 4.5A  
- **Power Dissipation (PD):** 50W  
- **Gate Threshold Voltage (VGS(th)):** 3V (typical)  
- **On-Resistance (RDS(on)):** 1.5Ω (max)  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- Designed for **high-voltage switching applications**.  
- **Low gate charge** for improved switching performance.  
- **Fast switching speed** for efficiency in power conversion.  
- **Avalanche energy specified** for ruggedness in inductive loads.  
- **Low on-resistance** for reduced conduction losses.  
- **Lead-free and RoHS compliant**.  

This MOSFET is commonly used in **power supplies, inverters, motor controls, and other high-voltage circuits**.  

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