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KHB4D0N80P1 from KEC

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KHB4D0N80P1

Manufacturer: KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
KHB4D0N80P1 KEC 10000 In Stock

Description and Introduction

N CHANNEL MOS FIELD EFFECT TRANSISTOR The part **KHB4D0N80P1** is manufactured by **KEC (Korea Electronics Corporation)**.

### **Specifications:**
- **Type:** N-Channel MOSFET
- **Voltage Rating (VDS):** 800V
- **Current Rating (ID):** 4A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 3.0Ω (typical)
- **Package:** TO-220F (isolated type)

### **Descriptions and Features:**
- **High Voltage Capability:** Suitable for high-voltage switching applications.
- **Low On-Resistance:** Ensures efficient power handling.
- **Fast Switching Speed:** Optimized for high-frequency applications.
- **Isolated Package (TO-220F):** Provides electrical isolation between the heatsink and the device.
- **Applications:** Used in power supplies, inverters, motor control, and other high-voltage switching circuits.

This MOSFET is designed for reliability and performance in demanding electronic applications.

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