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K6T4008V1C-GB70 from SAMSUNG

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K6T4008V1C-GB70

Manufacturer: SAMSUNG

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Partnumber Manufacturer Quantity Availability
K6T4008V1C-GB70,K6T4008V1CGB70 SAMSUNG 2148 In Stock

Description and Introduction

512Kx8 bit Low Power and Low Voltage CMOS Static RAM The **K6T4008V1C-GB70** is a memory IC manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 4Mbit (512K x 8)  
- **Organization:** 512K words × 8 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed:** 70ns (Access Time)  
- **Package:** 28-pin SOP (Small Outline Package)  
- **Interface:** Parallel  
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C) depending on variant  

### **Descriptions & Features:**  
- **Low Power Consumption:** Designed for power-sensitive applications.  
- **Fully Synchronous Operation:** All signals are registered on the positive edge of the clock.  
- **Auto Refresh & Self Refresh:** Supports both modes for efficient power management.  
- **Burst Mode Support:** Enhances sequential data access performance.  
- **CAS Latency Options:** Programmable for system flexibility.  
- **Single 3.3V Power Supply:** Simplifies system design.  
- **Compatible with JEDEC Standards:** Ensures industry-standard compliance.  

This memory IC is typically used in embedded systems, networking devices, and other applications requiring moderate-speed, low-power SDRAM.  

Would you like additional details on pin configurations or timing diagrams?

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