128Kx8 bit Low Power CMOS Static RAM The part **K6T1008C2E-RF55** is a memory component manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on available factual information:
### **Specifications:**
- **Manufacturer:** SAMSUNG
- **Part Number:** K6T1008C2E-RF55
- **Type:** Synchronous DRAM (SDRAM)
- **Density:** 128Mb (8M x 16)
- **Organization:** 8,388,608 words × 16 bits
- **Voltage:** 3.3V
- **Speed:** 55ns (RF55 denotes speed grade)
- **Package:** 54-pin TSOP (Thin Small Outline Package)
- **Interface:** LVTTL (Low Voltage TTL)
- **Refresh:** 4,096 cycles (64ms refresh interval)
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C), depending on variant
### **Descriptions:**
- The **K6T1008C2E-RF55** is a **128Mb (16MB) SDRAM** chip designed for high-speed data transfer in computing and embedded systems.
- It operates at **3.3V** and supports **synchronous operation** with a system clock.
- The **55ns access time** makes it suitable for applications requiring moderate-speed memory access.
### **Features:**
- **Synchronous Operation:** Clock-controlled for precise timing.
- **Burst Mode Support:** Enhances sequential data transfer efficiency.
- **Auto Refresh & Self Refresh:** Reduces power consumption in standby mode.
- **Programmable Burst Length:** Supports 1, 2, 4, 8, or full-page burst modes.
- **CAS Latency Options:** Configurable for system compatibility.
- **Single 3.3V Power Supply:** Low-power operation.
This information is based on standard SAMSUNG SDRAM specifications. For exact details, refer to the official **SAMSUNG datasheet** for **K6T1008C2E-RF55**.
