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K6R1008V1D-UC08 from SAMSUNG

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K6R1008V1D-UC08

Manufacturer: SAMSUNG

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Partnumber Manufacturer Quantity Availability
K6R1008V1D-UC08,K6R1008V1DUC08 SAMSUNG 2148 In Stock

Description and Introduction

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Here are the factual details about the part **K6R1008V1D-UC08** from the manufacturer **SAMSUNG**:

### **Specifications:**  
- **Part Number:** K6R1008V1D-UC08  
- **Manufacturer:** SAMSUNG  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 1Gb (Gigabit)  
- **Organization:** 128M x 8 (128 Meg words x 8 bits)  
- **Voltage:** 1.8V  
- **Speed Grade:** UC08 (800MHz @ CL=6)  
- **Package:** FBGA (Fine-pitch Ball Grid Array)  
- **Interface:** Parallel  
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C), depending on variant  

### **Descriptions & Features:**  
- **Low Power Consumption:** Designed for energy-efficient applications.  
- **High-Speed Performance:** Supports 800MHz clock frequency with CAS Latency (CL) of 6.  
- **Wide Compatibility:** Used in embedded systems, networking devices, and consumer electronics.  
- **Reliable Operation:** Built with Samsung’s advanced semiconductor technology for stability.  
- **RoHS Compliant:** Meets environmental standards.  

For exact datasheet details, refer to Samsung’s official documentation.

Application Scenarios & Design Considerations

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. # Technical Documentation: K6R1008V1DUC08 Memory Module

 Manufacturer:  SAMSUNG  
 Component Type:  1Gb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory)  
 Package:  60-FBGA (Fine-Pitch Ball Grid Array)  
 Revision:  1.0  

---

## 1. Application Scenarios (≈45%)

### 1.1 Typical Use Cases
The K6R1008V1DUC08 is a 1Gb DDR-400 SDRAM component optimized for applications requiring moderate-speed data transfer with cost-effective memory solutions. Key use cases include:

-  Embedded Computing Systems:  Single-board computers, industrial PCs, and control systems where predictable latency and reliable data retention are critical.
-  Network Infrastructure:  Routers, switches, and firewall appliances requiring buffer memory for packet processing and temporary data storage.
-  Consumer Electronics:  Set-top boxes, digital signage, and mid-range printers where DDR-400 provides sufficient bandwidth for multimedia processing.
-  Automotive Infotainment:  Secondary memory in dashboard systems for non-safety critical functions like map caching and UI rendering.
-  Legacy System Upgrades:  Maintenance and repair of industrial equipment originally designed for DDR1 memory architectures.

### 1.2 Industry Applications

| Industry | Specific Applications | Role of K6R1008V1DUC08 |
|----------|----------------------|-------------------------|
| Telecommunications | Base station controllers, PBX systems | Temporary storage for call routing data and configuration parameters |
| Industrial Automation | PLCs, HMI panels, motor controllers | Program storage and runtime data buffering |
| Medical Devices | Diagnostic equipment, patient monitors | Image frame buffering and temporary data logging |
| Aerospace & Defense | Avionics displays, ground support equipment | Non-critical system memory where radiation hardening isn't required |
| Retail & Hospitality | POS terminals, kiosk systems | Transaction buffer and UI element storage |

### 1.3 Practical Advantages and Limitations

 Advantages: 
-  Cost-Effectiveness:  Lower price point compared to newer DDR generations while maintaining adequate performance for many applications
-  Power Efficiency:  Operating voltage of 2.5V±0.2V provides reasonable power consumption for always-on devices
-  Thermal Performance:  FBGA packaging enables efficient heat dissipation in constrained environments
-  Reliability:  Proven DDR1 technology with mature manufacturing processes and known failure modes
-  Compatibility:  Direct replacement for many legacy systems without redesign

 Limitations: 
-  Bandwidth Constraints:  Maximum 400 Mbps/pin limits suitability for high-performance computing
-  Density Limitations:  1Gb maximum capacity may require multiple components for larger memory requirements
-  Obsolescence Risk:  DDR1 technology is being phased out by manufacturers
-  Refresh Requirements:  Typical refresh period of 64ms necessitates proper controller implementation
-  Speed Grade:  CAS latency of 3 cycles at 400MHz may not meet real-time system requirements

---

## 2. Design Considerations (≈35%)

### 2.1 Common Design Pitfalls and Solutions

| Pitfall | Impact | Solution |
|---------|--------|----------|
| Improper termination | Signal reflections causing data corruption | Implement 50Ω series termination at driver and parallel termination at receiver |
| Inadequate decoupling | Voltage droops during simultaneous switching | Place 0.1μF ceramic capacitors within 5mm of each power pin, plus bulk capacitance (10-100μF) per bank |
| Violating timing constraints | Setup/hold time violations | Strict adherence to tRCD, tRP, tRAS parameters; use manufacturer-provided timing calculator |
| Thermal management | Reduced reliability at elevated temperatures | Ensure minimum 2 LFM airflow across package; consider thermal vias in PCB for heat dissipation |
| Improper initialization | Unstable

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