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K6F2008U2E-EF70 from SEC

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K6F2008U2E-EF70

Manufacturer: SEC

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Partnumber Manufacturer Quantity Availability
K6F2008U2E-EF70,K6F2008U2EEF70 SEC 1136 In Stock

Description and Introduction

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM The part **K6F2008U2E-EF70** is manufactured by **SEC (Samsung Electronics Co., Ltd.)**.  

### **Specifications:**  
- **Memory Type:** NAND Flash  
- **Density:** 2Gb (256MB)  
- **Interface:** Asynchronous  
- **Voltage Supply:** 3.3V  
- **Organization:** x8  
- **Package Type:** TSOP-48  

### **Descriptions & Features:**  
- **High Performance:** Offers fast read and write operations.  
- **Reliability:** Supports error correction and wear-leveling mechanisms.  
- **Low Power Consumption:** Optimized for power efficiency.  
- **Wide Temperature Range:** Suitable for industrial applications.  
- **Compatibility:** Designed for embedded systems and consumer electronics.  

This part is commonly used in applications such as **SSDs, USB drives, and other storage solutions**.  

Would you like additional details on any specific aspect?

Partnumber Manufacturer Quantity Availability
K6F2008U2E-EF70,K6F2008U2EEF70 SAMSUNG 120 In Stock

Description and Introduction

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM The **K6F2008U2E-EF70** is a NAND Flash Memory IC manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Memory Type:** NAND Flash  
- **Density:** 2Gbit (256M x 8)  
- **Interface:** Asynchronous  
- **Supply Voltage:** 2.7V - 3.6V  
- **Organization:**  
  - Page Size: 512 + 16 Bytes (Main + Spare)  
  - Block Size: 16KB + 512 Bytes (Main + Spare)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant  
- **Package:** TSOP-48  

### **Descriptions & Features:**  
- **High Performance:** Supports fast read and program operations.  
- **Reliability:** Includes ECC (Error Correction Code) for data integrity.  
- **Command Set:** Compatible with standard NAND Flash command protocols.  
- **On-Chip Bad Block Management:** Supports automatic bad block handling.  
- **Low Power Consumption:** Optimized for power efficiency.  
- **Endurance:** High program/erase cycles (typically 100K cycles).  

This NAND Flash memory is commonly used in embedded systems, consumer electronics, and storage applications.  

(Note: Verify datasheet for exact details as specifications may vary slightly.)

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