256Mb F-die DDR2 SDRAM The K4T56083QF is a memory chip manufactured by Samsung. Below are its specifications, descriptions, and features based on available factual information:
### **Specifications:**
- **Manufacturer:** Samsung
- **Part Number:** K4T56083QF
- **Type:** DDR2 SDRAM (Synchronous DRAM)
- **Density:** 512Mb (64M x 8)
- **Organization:** 64M words × 8 bits
- **Voltage:** 1.8V ± 0.1V
- **Speed:** Various speed grades available (e.g., 400MHz, 533MHz, 667MHz)
- **Package:** FBGA (Fine-pitch Ball Grid Array)
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C) depending on variant
- **Refresh:** Auto-refresh and self-refresh supported
- **Burst Length:** 4 or 8 (programmable)
- **CAS Latency (CL):** 3, 4, or 5 (depending on speed grade)
### **Descriptions:**
- The K4T56083QF is a high-speed, low-power DDR2 SDRAM module designed for applications requiring high bandwidth and efficiency.
- It supports double data rate architecture, transferring data on both the rising and falling edges of the clock signal.
- The chip is commonly used in computing systems, networking equipment, and embedded applications.
### **Features:**
- **DDR2 Technology:** Provides improved performance and lower power consumption compared to DDR1.
- **Programmable CAS Latency:** Supports flexible timing configurations.
- **On-Die Termination (ODT):** Reduces signal reflections for better signal integrity.
- **4-Bank Architecture:** Enhances memory access efficiency.
- **Low Power Consumption:** Operates at 1.8V, reducing power usage.
- **RoHS Compliant:** Environmentally friendly manufacturing.
For exact speed grades, timing parameters, and other detailed specifications, refer to Samsung’s official datasheet for the K4T56083QF.
