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KSE3055T from FAI,Fairchild Semiconductor

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KSE3055T

Manufacturer: FAI

NPN Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSE3055T FAI 540 In Stock

Description and Introduction

NPN Silicon Transistor Here is the factual information about part **KSE3055T** from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **FAI (First Auto Industrial)**  

### **Specifications:**  
- **Type:** Power MOSFET  
- **Polarity:** N-Channel  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 6.5mΩ (max) @ VGS = 10V  
- **Gate Charge (Qg):** 110nC (typical)  
- **Package:** TO-220  

### **Descriptions and Features:**  
- Designed for high-power switching applications.  
- Low on-resistance for improved efficiency.  
- Fast switching performance.  
- Suitable for motor control, power supplies, and DC-DC converters.  
- Robust thermal performance with a TO-220 package.  

Let me know if you need further details.

Partnumber Manufacturer Quantity Availability
KSE3055T SEC 100 In Stock

Description and Introduction

NPN Silicon Transistor The part **KSE3055T** is manufactured by **SEC (Samsung Electronics Co., Ltd.)**.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-220  
- **Maximum Collector-Emitter Voltage (VCE):** 60V  
- **Maximum Collector Current (IC):** 30A  
- **Power Dissipation (PD):** 50W  
- **DC Current Gain (hFE):** 20-70  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current capability with moderate voltage handling.  
- Suitable for power supply circuits, motor control, and audio amplifiers.  
- TO-220 package provides efficient thermal dissipation.  

For detailed datasheets, refer to official SEC documentation.

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