NPN Silicon Transistor Here are the factual details about part **KSE13007** from the manufacturer **FAIRCHILD**:
### **Specifications:**
- **Type:** High Voltage NPN Power Transistor (Bipolar Junction Transistor - BJT)
- **Collector-Emitter Voltage (VCEO):** 400V
- **Collector-Base Voltage (VCBO):** 700V
- **Emitter-Base Voltage (VEBO):** 9V
- **Collector Current (IC):** 8A (Continuous)
- **Peak Collector Current (ICM):** 16A (Pulsed)
- **Power Dissipation (PD):** 80W (at 25°C)
- **DC Current Gain (hFE):** 8 to 40 (at IC = 4A, VCE = 5V)
- **Transition Frequency (fT):** 4MHz (Typical)
- **Operating Junction Temperature (Tj):** -55°C to +150°C
- **Package:** TO-220 (Standard through-hole package)
### **Descriptions:**
The **KSE13007** is a high-voltage NPN power transistor designed for switching applications, particularly in power supplies, inverters, and electronic ballasts. It offers high breakdown voltage and fast switching speeds, making it suitable for high-efficiency circuits.
### **Features:**
- High voltage capability (up to 400V VCEO)
- High current handling (8A continuous, 16A peak)
- Fast switching performance
- Low saturation voltage
- TO-220 package for easy mounting and heat dissipation
This information is based on Fairchild Semiconductor's datasheet for the **KSE13007** transistor.
