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KSE13005FH2TU from FAIRCHILDL,Fairchild Semiconductor

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KSE13005FH2TU

Manufacturer: FAIRCHILDL

NPN Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSE13005FH2TU FAIRCHILDL 1000 In Stock

Description and Introduction

NPN Silicon Transistor The part **KSE13005FH2TU** is manufactured by **FAIRCHILD**. Below are the specifications, descriptions, and features based on factual information:

### **Specifications:**  
- **Manufacturer:** FAIRCHILD  
- **Part Number:** KSE13005FH2TU  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-220F (Fully Insulated)  
- **Maximum Voltage (VCEO):** 400V  
- **Maximum Collector Current (IC):** 4A  
- **Power Dissipation (PD):** 40W  
- **DC Current Gain (hFE):** 8 to 40 (at IC = 2A, VCE = 5V)  
- **Transition Frequency (fT):** 4MHz (Typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Descriptions:**  
- High-voltage, high-speed switching transistor.  
- Designed for general-purpose amplifier and switching applications.  
- Fully insulated TO-220F package for improved thermal performance and safety.  

### **Features:**  
- Low saturation voltage.  
- High current capability.  
- Fast switching speed.  
- Suitable for power supply and inverter applications.  

This information is sourced from the manufacturer's datasheet and product documentation.

Partnumber Manufacturer Quantity Availability
KSE13005FH2TU FAIRCHILD 1000 In Stock

Description and Introduction

NPN Silicon Transistor **Part Number:** KSE13005FH2TU  
**Manufacturer:** FAIRCHILD  

### **Specifications:**  
- **Transistor Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCEO):** 400V  
- **Collector-Base Voltage (VCBO):** 500V  
- **Emitter-Base Voltage (VEBO):** 9V  
- **Collector Current (IC):** 8A  
- **Power Dissipation (PD):** 75W  
- **DC Current Gain (hFE):** 8 to 40 (at IC = 4A, VCE = 5V)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package Type:** TO-220F (Fully Insulated Package)  

### **Descriptions and Features:**  
- High-voltage, high-speed switching transistor designed for power applications.  
- Suitable for use in electronic ballasts, power supplies, and inverters.  
- Fully insulated TO-220F package enhances safety and thermal performance.  
- Low saturation voltage for improved efficiency.  
- Robust construction for reliable operation in demanding environments.  

(No additional suggestions or guidance provided.)

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