IC Phoenix logo

Home ›  K  › K12 > KSE13005FH2TU

KSE13005FH2TU from FAIRCHILDL,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

KSE13005FH2TU

Manufacturer: FAIRCHILDL

NPN Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSE13005FH2TU FAIRCHILDL 1000 In Stock

Description and Introduction

NPN Silicon Transistor The part **KSE13005FH2TU** is manufactured by **FAIRCHILD**. Below are the specifications, descriptions, and features based on factual information:

### **Specifications:**  
- **Manufacturer:** FAIRCHILD  
- **Part Number:** KSE13005FH2TU  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-220F (Fully Insulated)  
- **Maximum Voltage (VCEO):** 400V  
- **Maximum Collector Current (IC):** 4A  
- **Power Dissipation (PD):** 40W  
- **DC Current Gain (hFE):** 8 to 40 (at IC = 2A, VCE = 5V)  
- **Transition Frequency (fT):** 4MHz (Typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Descriptions:**  
- High-voltage, high-speed switching transistor.  
- Designed for general-purpose amplifier and switching applications.  
- Fully insulated TO-220F package for improved thermal performance and safety.  

### **Features:**  
- Low saturation voltage.  
- High current capability.  
- Fast switching speed.  
- Suitable for power supply and inverter applications.  

This information is sourced from the manufacturer's datasheet and product documentation.

Application Scenarios & Design Considerations

NPN Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSE13005FH2TU FAIRCHILD 1000 In Stock

Description and Introduction

NPN Silicon Transistor **Part Number:** KSE13005FH2TU  
**Manufacturer:** FAIRCHILD  

### **Specifications:**  
- **Transistor Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCEO):** 400V  
- **Collector-Base Voltage (VCBO):** 500V  
- **Emitter-Base Voltage (VEBO):** 9V  
- **Collector Current (IC):** 8A  
- **Power Dissipation (PD):** 75W  
- **DC Current Gain (hFE):** 8 to 40 (at IC = 4A, VCE = 5V)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package Type:** TO-220F (Fully Insulated Package)  

### **Descriptions and Features:**  
- High-voltage, high-speed switching transistor designed for power applications.  
- Suitable for use in electronic ballasts, power supplies, and inverters.  
- Fully insulated TO-220F package enhances safety and thermal performance.  
- Low saturation voltage for improved efficiency.  
- Robust construction for reliable operation in demanding environments.  

(No additional suggestions or guidance provided.)

Application Scenarios & Design Considerations

NPN Silicon Transistor

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips