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KSC5042FTU from FAIRCHILD,Fairchild Semiconductor

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KSC5042FTU

Manufacturer: FAIRCHILD

NPN Triple Diffused Planar Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC5042FTU FAIRCHILD 5000 In Stock

Description and Introduction

NPN Triple Diffused Planar Silicon Transistor The KSC5042FTU is a transistor manufactured by **FAIRCHILD**. Below are its specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Type:** NPN Silicon Epitaxial Planar Transistor  
- **Collector-Emitter Voltage (VCEO):** 150V  
- **Collector-Base Voltage (VCBO):** 150V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 1A  
- **Power Dissipation (PD):** 1W  
- **DC Current Gain (hFE):** 40-320 (depending on conditions)  
- **Transition Frequency (fT):** 50MHz  
- **Package:** TO-126  

### **Descriptions:**  
- Designed for general-purpose amplification and switching applications.  
- Suitable for low to medium power applications.  
- Features high voltage capability and good current gain linearity.  

### **Features:**  
- **High Voltage Capability** (up to 150V)  
- **Low Saturation Voltage**  
- **Complementary PNP Type Available** (KSA1381)  
- **Pb-Free and RoHS Compliant**  

For exact performance characteristics, refer to the official **FAIRCHILD datasheet**.

Application Scenarios & Design Considerations

NPN Triple Diffused Planar Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSC5042FTU FSC 950 In Stock

Description and Introduction

NPN Triple Diffused Planar Silicon Transistor The part **KSC5042FTU** is manufactured by **FSC (Fairchild Semiconductor Corporation)**.  

### **Specifications:**  
- **Manufacturer:** Fairchild Semiconductor Corporation (FSC)  
- **Part Number:** KSC5042FTU  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-220F (isolated type)  
- **Maximum Ratings:**  
  - **Collector-Base Voltage (VCBO):** 900V  
  - **Collector-Emitter Voltage (VCEO):** 800V  
  - **Emitter-Base Voltage (VEBO):** 9V  
  - **Collector Current (IC):** 8A  
  - **Power Dissipation (PD):** 40W  
- **Electrical Characteristics:**  
  - **DC Current Gain (hFE):** 8 to 40 (at IC = 4A, VCE = 5V)  
  - **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.5V (max) at IC = 4A, IB = 0.8A  
  - **Transition Frequency (fT):** 4MHz (typical)  

### **Descriptions and Features:**  
- High-voltage, high-speed switching transistor  
- Suitable for power supply and inverter applications  
- Low saturation voltage for improved efficiency  
- Isolated TO-220F package for better thermal performance  
- Designed for use in CRT displays, power supplies, and industrial equipment  

For exact performance curves and application notes, refer to the official Fairchild Semiconductor datasheet.

Application Scenarios & Design Considerations

NPN Triple Diffused Planar Silicon Transistor

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