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KSC3503DS from FAIRCHILD,Fairchild Semiconductor

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KSC3503DS

Manufacturer: FAIRCHILD

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC3503DS FAIRCHILD 405 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor The KSC3503DS is a high-voltage NPN transistor manufactured by Fairchild Semiconductor. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Transistor Type:** NPN  
- **Voltage Ratings:**  
  - **Collector-Base Voltage (VCB):** 300V  
  - **Collector-Emitter Voltage (VCE):** 300V  
  - **Emitter-Base Voltage (VEB):** 5V  
- **Current Ratings:**  
  - **Collector Current (IC):** 100mA  
  - **Base Current (IB):** 50mA  
- **Power Dissipation (PD):** 1.5W  
- **DC Current Gain (hFE):** 60 to 320 (at IC = 10mA, VCE = 10V)  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The KSC3503DS is a high-voltage NPN bipolar junction transistor (BJT) designed for applications requiring high breakdown voltage and medium power handling. It is commonly used in power switching, amplification, and high-voltage circuits.  

### **Features:**  
- High breakdown voltage (300V)  
- Medium power dissipation (1.5W)  
- High DC current gain (hFE) range  
- Suitable for switching and amplification in high-voltage circuits  
- TO-126 package (similar to TO-220 but with lower power handling)  

This information is based on Fairchild Semiconductor's datasheet for the KSC3503DS.

Partnumber Manufacturer Quantity Availability
KSC3503DS FSC 8000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor The part **KSC3503DS** is manufactured by **FSC (Fairchild Semiconductor Corporation)**.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-126  
- **Collector-Emitter Voltage (VCEO):** 300V  
- **Collector-Base Voltage (VCBO):** 300V  
- **Emitter-Base Voltage (VEBO):** 7V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 1.25W  
- **DC Current Gain (hFE):** 30 to 150  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- High-voltage NPN transistor designed for general-purpose amplification and switching applications.  
- Suitable for high-voltage circuits, such as power supplies and CRT displays.  
- Low saturation voltage for efficient switching performance.  
- TO-126 package provides good thermal dissipation.  

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official FSC documentation.

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