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KSC2688OS from FAIRCHILD,Fairchild Semiconductor

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KSC2688OS

Manufacturer: FAIRCHILD

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC2688OS FAIRCHILD 1248 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor Here are the factual details about part **KSC2688OS** from the manufacturer **FAIRCHILD**:

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE):** 120V  
- **Collector-Base Voltage (VCB):** 120V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 0.1A (100mA)  
- **Power Dissipation (PD):** 0.8W  
- **DC Current Gain (hFE):** 100 to 320 (at IC = 2mA, VCE = 10V)  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-92 (Through-Hole)  

### **Descriptions:**  
The **KSC2688OS** is a general-purpose NPN transistor designed for amplification and switching applications. It is suitable for low-power circuits requiring moderate voltage and current handling.  

### **Features:**  
- High voltage capability (120V)  
- Low noise performance  
- Suitable for audio and RF applications  
- Complementary PNP part: **KSA1220AYS**  

This information is based on Fairchild Semiconductor's datasheet for the **KSC2688OS** transistor.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSC2688OS FAIRCHIL 32590 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor Here are the factual details about part **KSC2688OS** from the manufacturer **FAIRCHILD** (likely a typo, correct manufacturer is **Fairchild Semiconductor**):

### **Specifications:**
- **Type:** NPN Bipolar Junction Transistor (BJT)
- **Package:** TO-92 (through-hole)
- **Collector-Emitter Voltage (VCE):** 30V  
- **Collector-Base Voltage (VCB):** 30V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 300mW  
- **DC Current Gain (hFE):** 100–320 (at IC = 2mA, VCE = 10V)  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**
- Designed for general-purpose amplification and switching applications.  
- High current gain (hFE) with low noise performance.  
- Suitable for low-power audio amplification and signal processing.  
- Complementary PNP transistor: **KSA1220AYS** (if paired for push-pull circuits).  

(Note: Manufacturer name may have been misspelled as "FAIRCHIL" or "FAIRCHILD." The correct manufacturer is **Fairchild Semiconductor**, now part of ON Semiconductor.)

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

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