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KSC2682 from SAMSUNG

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KSC2682

Manufacturer: SAMSUNG

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC2682 SAMSUNG 6000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **Part Number:** KSC2682  
**Manufacturer:** SAMSUNG  

### **Specifications:**  
- **Type:** Bipolar Junction Transistor (BJT)  
- **Polarity:** NPN  
- **Maximum Collector-Emitter Voltage (VCE):** 30V  
- **Maximum Collector Current (IC):** 100mA  
- **Maximum Power Dissipation (PD):** 300mW  
- **DC Current Gain (hFE):** 60 - 320  
- **Transition Frequency (fT):** 150MHz  
- **Package Type:** TO-92  

### **Descriptions:**  
The KSC2682 is a general-purpose NPN transistor designed for amplification and switching applications. It features moderate current and voltage ratings, making it suitable for low-power circuits.  

### **Features:**  
- High DC current gain  
- Low noise performance  
- Suitable for RF and audio applications  
- Compact TO-92 package for easy mounting  

This transistor is commonly used in signal amplification, oscillator circuits, and driver stages.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

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