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KSC2682-Y-S from SEC

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KSC2682-Y-S

Manufacturer: SEC

NPN Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSC2682-Y-S,KSC2682YS SEC 80 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **KSC2682-Y-S Manufacturer: SEC (Samsung Electronics)**  

- **Specifications:**  
  - **Type:** NPN Bipolar Junction Transistor (BJT)  
  - **Maximum Collector-Emitter Voltage (VCEO):** 30V  
  - **Maximum Collector Current (IC):** 100mA  
  - **Power Dissipation (PD):** 300mW  
  - **DC Current Gain (hFE):** 100–320 (at IC = 2mA, VCE = 5V)  
  - **Transition Frequency (fT):** 150MHz  
  - **Package Type:** SOT-23 (Small Outline Transistor)  

- **Descriptions & Features:**  
  - Designed for general-purpose amplification and switching applications.  
  - Low noise and high gain characteristics.  
  - Suitable for high-frequency circuits due to its transition frequency.  
  - Compact SOT-23 package for space-constrained designs.  
  - RoHS compliant.  

(Data sourced from SEC/Samsung Electronics documentation.)

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

Alternative Part Number

  • 2SC2682 --: Same 2SC2682 transistor type with matching low-noise audio NPN characteristics and pinout, direct functional substitute.
  • 2SC2240 --: Low-noise NPN audio transistor commonly used in the same preamp stages, similar voltage and current ratings.
  • BC550C --: Widely available low-noise NPN transistor suitable for audio small-signal applications, though pinout and voltage ratings should be verified.

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