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KSC2331 from SAMSUNG

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KSC2331

Manufacturer: SAMSUNG

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC2331 SAMSUNG 590 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor Here are the factual details about part **KSC2331** from Ic-phoenix technical data files:  

### **Manufacturer Specifications:**  
- **Manufacturer:** ON Semiconductor  
- **Type:** Bipolar Junction Transistor (BJT)  
- **Polarity:** NPN  
- **Package:** TO-92 (Through-Hole)  
- **Maximum Collector-Emitter Voltage (VCEO):** 160V  
- **Maximum Collector Current (IC):** 1.5A  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 50–160  
- **Transition Frequency (fT):** 50MHz  

### **Descriptions:**  
The **KSC2331** is a high-voltage NPN transistor designed for general-purpose amplification and switching applications. It is commonly used in power supply circuits, audio amplifiers, and driver stages.  

### **Features:**  
- High voltage capability (160V VCEO)  
- Medium current handling (1.5A)  
- Low saturation voltage for efficient switching  
- Suitable for linear and switching applications  
- TO-92 package for easy PCB mounting  

This information is based strictly on manufacturer-provided data. Let me know if you need further details.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

Alternative Part Number

  • 2SC2331 --: Same 2SC-series NPN transistor with comparable voltage and current ratings, widely available and a direct functional substitute.
  • 2N2222A --: General-purpose NPN transistor with similar switching characteristics; usable in many low-power circuits where the KSC2331 is applied.
  • BC337 --: Common NPN transistor with adequate current gain and voltage rating for general switching and amplification, offering a low-cost alternative.

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