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KSC2328AOBU from FAIRCHILD,Fairchild Semiconductor

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KSC2328AOBU

Manufacturer: FAIRCHILD

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSC2328AOBU FAIRCHILD 13388 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor Here are the factual details about part **KSC2328AOBU** from the manufacturer **FAIRCHILD**:

### **Specifications:**  
- **Manufacturer:** FAIRCHILD  
- **Part Number:** KSC2328AOBU  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-92 (Through-Hole)  
- **Polarity:** NPN  
- **Maximum Collector-Base Voltage (VCB):** 160V  
- **Maximum Collector-Emitter Voltage (VCE):** 160V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 1.5A  
- **Power Dissipation (PD):** 1.5W  
- **DC Current Gain (hFE):** 100 to 320 (at IC = 150mA, VCE = 1V)  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High voltage capability with low saturation voltage.  
- Suitable for driver stages in audio amplifiers, power regulators, and switching circuits.  
- TO-92 package allows for easy through-hole PCB mounting.  
- Complementary PNP part: KSA916 (if applicable).  

For exact datasheet details, refer to the official FAIRCHILD documentation.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSC2328AOBU FSC 42000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **Part Number:** KSC2328AOBU  
**Manufacturer:** FSC (Fairchild Semiconductor Corporation)  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** TO-92  
- **Collector-Emitter Voltage (VCEO):** 30V  
- **Collector-Base Voltage (VCBO):** 30V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 300mW  
- **DC Current Gain (hFE):** 100–400 (at IC = 2mA, VCE = 10V)  
- **Transition Frequency (fT):** 250MHz (typical)  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain and low saturation voltage.  
- Suitable for low-power applications in consumer electronics, signal processing, and audio amplification.  
- RoHS compliant.  

(Note: Verify datasheet for exact parameters as specifications may vary slightly.)

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

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