IC Phoenix logo

Home ›  K  › K11 > KSA940TU

KSA940TU from FAIRCHILD,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

KSA940TU

Manufacturer: FAIRCHILD

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSA940TU FAIRCHILD 2436 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KSA940TU** is manufactured by **FAIRCHILD**. Below are its specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCEO):** -150V  
- **Collector-Base Voltage (VCBO):** -160V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1.5A  
- **Power Dissipation (PD):** 25W  
- **DC Current Gain (hFE):** 60 to 320 (depending on conditions)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** TO-220 (Through-Hole)  

### **Descriptions:**
- The KSA940TU is a high-voltage PNP transistor designed for general-purpose amplification and switching applications.  
- It is suitable for use in power supplies, audio amplifiers, and other medium-power circuits.  

### **Features:**
- High voltage capability  
- High current handling  
- Low saturation voltage  
- Complementary NPN type: **KSC2073TU**  

For detailed electrical characteristics and performance curves, refer to the official **Fairchild datasheet**.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSA940TU FSC 3950 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The KSA940TU is a PNP transistor manufactured by FSC (Fairchild Semiconductor). Below are the factual details about this component:

### **Manufacturer:**  
- **FSC (Fairchild Semiconductor)**  

### **Specifications:**  
- **Type:** PNP Epitaxial Planar Transistor  
- **Collector-Base Voltage (VCBO):** -150V  
- **Collector-Emitter Voltage (VCEO):** -150V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1.5A  
- **Power Dissipation (Ptot):** 25W  
- **Junction Temperature (Tj):** 150°C  
- **DC Current Gain (hFE):** 40 to 320 (depending on operating conditions)  
- **Transition Frequency (fT):** 4MHz (typical)  

### **Descriptions:**  
- Designed for general-purpose amplification and switching applications.  
- Suitable for medium-power applications in audio amplifiers, power regulators, and switching circuits.  

### **Features:**  
- High voltage capability.  
- Low leakage current.  
- Complementary to NPN transistor KSC2073TU.  
- TO-220 package for efficient heat dissipation.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips