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KSA614YTU from FAIRCHIL,Fairchild Semiconductor

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KSA614YTU

Manufacturer: FAIRCHIL

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSA614YTU FAIRCHIL 18000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KSA614YTU** is manufactured by **FAIRCHILD**. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** FAIRCHILD  
- **Part Number:** KSA614YTU  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-89 (TO-243)  
- **Maximum Collector-Emitter Voltage (Vceo):** -120V  
- **Maximum Collector Current (Ic):** -0.1A  
- **Power Dissipation (Pd):** 1W  
- **DC Current Gain (hFE):** 40 to 320 (depending on conditions)  
- **Transition Frequency (ft):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The **KSA614YTU** is a high-voltage PNP transistor designed for general-purpose amplifier and switching applications.  
- It is housed in a **SOT-89** surface-mount package, making it suitable for compact PCB designs.  
- The transistor is optimized for low noise and high gain performance.  

### **Features:**  
- **High Voltage Capability** (up to -120V Vceo)  
- **Low Noise** for improved signal integrity  
- **High DC Current Gain (hFE)** for efficient amplification  
- **Compact SOT-89 Package** for space-saving designs  
- **Suitable for Switching and Amplification Circuits**  

This information is strictly based on the provided knowledge base. Let me know if you need further details.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSA614YTU FAIRCHILD 4000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KSA614YTU** is manufactured by **FAIRCHILD**. Below are the specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE):** -120V  
- **Collector-Base Voltage (VCB):** -120V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Collector Current (IC):** -50mA  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 40 to 320  
- **Transition Frequency (fT):** 50MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-92  

### **Description:**  
The **KSA614YTU** is a high-voltage PNP transistor designed for general-purpose amplification and switching applications. It is suitable for use in audio amplifiers, power management circuits, and other electronic systems requiring medium power handling.  

### **Features:**  
- High voltage capability  
- Low noise performance  
- High current gain (hFE) range  
- Compact TO-92 package for easy mounting  

This information is based on Fairchild Semiconductor's datasheet for the KSA614YTU transistor. For detailed electrical characteristics and application notes, refer to the official datasheet.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor

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