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K4S640832F-TC75 from SAMSUNG

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K4S640832F-TC75

Manufacturer: SAMSUNG

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Partnumber Manufacturer Quantity Availability
K4S640832F-TC75,K4S640832FTC75 SAMSUNG 63 In Stock

Description and Introduction

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL The **K4S640832F-TC75** is a **64Mbit (8M x 8-bit) Synchronous DRAM (SDRAM)** manufactured by **Samsung**.  

### **Key Specifications:**  
- **Organization:** 8M words × 8 bits  
- **Density:** 64Mbit (8MB)  
- **Voltage Supply:** 3.3V ± 0.3V  
- **Speed Grade:** **TC75** (7.5ns access time, 133MHz operating frequency)  
- **Package:** 54-pin TSOP-II (400mil)  
- **Refresh Mode:** 4096 refresh cycles every 64ms  
- **Burst Length:** 1, 2, 4, 8, or full page  
- **CAS Latency (CL):** 2 or 3  
- **Interface:** Fully synchronous with single clock edge  
- **Operating Temperature:** Commercial (0°C to +70°C)  

### **Features:**  
- **Auto Refresh & Self Refresh**  
- **Programmable Burst Length & CAS Latency**  
- **Power Down Mode**  
- **LVTTL-compatible I/O**  
- **4 Banks Operation**  
- **JEDEC Standard Compliant**  

This SDRAM is commonly used in **PCs, networking devices, and embedded systems** requiring moderate-speed memory.

Partnumber Manufacturer Quantity Availability
K4S640832F-TC75,K4S640832FTC75 196 In Stock

Description and Introduction

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL The **K4S640832F-TC75** is a **64Mbit (8M x 8-bit) Synchronous DRAM (SDRAM)** manufactured by **Samsung**. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Density:** 64Mbit (8M words × 8 bits)  
- **Organization:** 8,388,608 words × 8 bits  
- **Voltage:** 3.3V (±0.3V)  
- **Speed:** 7.5ns (133MHz @ CL=2)  
- **Refresh Cycles:** 4,096 (64ms refresh interval)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package:** 54-pin TSOP II (400mil width)  

### **Features:**  
- Fully synchronous operation with a single **3.3V** power supply  
- **Burst read/write** capability (programmable burst length: 1, 2, 4, 8, or full page)  
- **Auto Refresh (CBR)** and **Self Refresh** modes  
- **CAS Latency (CL):** 2 or 3 programmable  
- **Four internal banks** for concurrent operations  
- **LVTTL-compatible** inputs and outputs  
- **Data Mask (DM)** for byte-wise control  

### **Applications:**  
- **PC memory modules**  
- **Networking equipment**  
- **Embedded systems**  
- **Consumer electronics**  

This SDRAM is designed for **high-speed data transfer** in synchronous systems and supports **low-power operation** in self-refresh mode.  

Would you like additional details on timing parameters or pin configurations?

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