4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC The K4S561633F is a synchronous DRAM (SDRAM) manufactured by Samsung. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Type:** Synchronous DRAM (SDRAM)
- **Density:** 256Mbit (16M x 16)
- **Organization:** 4 Banks x 4M words x 16 bits
- **Voltage Supply:** 3.3V ± 0.3V
- **Operating Frequency:** Up to 143 MHz (PC133 compliant)
- **Access Time:** 5.4ns (CL=3)
- **Package:** 54-pin TSOP-II (400mil)
- **Refresh Mode:** Auto-refresh and self-refresh
- **Burst Length:** 1, 2, 4, 8, or full page
- **CAS Latency (CL):** 2 or 3 programmable
- **Interface:** LVTTL-compatible
### **Descriptions:**
- The K4S561633F is a high-speed CMOS SDRAM designed for applications requiring high-density and high-bandwidth memory.
- It supports programmable burst lengths and CAS latencies for flexible system integration.
- It is commonly used in PCs, networking equipment, and embedded systems.
### **Features:**
- **Auto Precharge:** Supports auto precharge for improved efficiency.
- **Power Saving Modes:** Includes power-down and self-refresh modes.
- **Burst Read/Write:** Supports sequential and interleaved burst operations.
- **Single 3.3V Power Supply:** Low power consumption.
- **Fully Synchronous Operation:** All signals are registered on the positive edge of the clock.
- **On-Die Termination (ODT):** Reduces signal reflections for better signal integrity (if applicable in newer variants).
This information is based solely on the manufacturer's specifications for the K4S561633F SDRAM chip.
