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K4S281632M-TL1H from SAM

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15.625ms

K4S281632M-TL1H

Manufacturer: SAM

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Partnumber Manufacturer Quantity Availability
K4S281632M-TL1H,K4S281632MTL1H SAM 1200 In Stock

Description and Introduction

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL The **K4S281632M-TL1H** is a memory chip manufactured by **Samsung (SAM)**. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
- **Samsung (SAM)**  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 128Mbit (4M x 32)  
- **Organization:** 4 banks, 4M words × 32 bits  
- **Voltage:** 3.3V  
- **Speed:** Various speed grades available (specific speed for TL1H variant should be checked in datasheet)  
- **Package:** TSOP-II (Thin Small Outline Package)  
- **Interface:** LVTTL  

### **Descriptions & Features:**  
- **High-Speed Operation:** Supports fast data transfer rates.  
- **Burst Mode:** Supports sequential and interleaved burst modes.  
- **Auto Refresh & Self Refresh:** Includes power-saving modes.  
- **Programmable Burst Length:** 1, 2, 4, 8, or full page.  
- **CAS Latency:** Supports programmable CAS latencies (typically 2 or 3).  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C), depending on variant.  

For exact timing parameters and speed grade details, refer to the official **Samsung datasheet** for **K4S281632M-TL1H**.

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