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K4S281632E-TL75 from SAMSUNG

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K4S281632E-TL75

Manufacturer: SAMSUNG

128Mb E-die SDRAM Specification

Partnumber Manufacturer Quantity Availability
K4S281632E-TL75,K4S281632ETL75 SAMSUNG 39 In Stock

Description and Introduction

128Mb E-die SDRAM Specification The K4S281632E-TL75 is a 128Mb (16M x 8-bit) Synchronous DRAM (SDRAM) manufactured by Samsung. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 128Mb (16M words × 8 bits)  
- **Organization:** 4 Banks × 4M words × 8 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed:** 7.5ns (133MHz @ CL=3)  
- **Package:** 54-pin TSOP II  
- **Refresh Mode:** Auto-refresh & Self-refresh (8K cycles/64ms)  
- **Burst Length:** 1, 2, 4, 8, or Full Page  
- **CAS Latency (CL):** 2, 3 programmable  
- **Operating Temperature:** Commercial (0°C to +70°C)  

### **Descriptions:**
- Fully synchronous operation with a single 3.3V power supply.  
- Internal pipelined architecture for high-speed data transfer.  
- Supports burst read/write operations for efficient data access.  
- Auto-precharge and power-down modes for reduced power consumption.  

### **Features:**
- **High Performance:** 133MHz operation with low latency.  
- **Multiple Burst Lengths:** Configurable for flexible data access.  
- **Low Power Consumption:** Auto-refresh and power-saving modes.  
- **Compatibility:** JEDEC-standard SDRAM interface.  
- **Wide Applications:** Used in PCs, networking, and embedded systems.  

This SDRAM is designed for applications requiring high-speed, low-power memory solutions.

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