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K4S281632B-TL75 from SAMSUNG

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K4S281632B-TL75

Manufacturer: SAMSUNG

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Partnumber Manufacturer Quantity Availability
K4S281632B-TL75,K4S281632BTL75 SAMSUNG 2600 In Stock

Description and Introduction

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL The **K4S281632B-TL75** is a memory IC manufactured by **Samsung**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 128Mbit (4M x 32)  
- **Organization:** 4 Banks x 4M words x 32 bits  
- **Voltage Supply:** 3.3V ± 0.3V  
- **Speed:** 7.5ns (PC133 compliant)  
- **Package:** 54-pin TSOP II  
- **Operating Temperature:** Commercial (0°C to +70°C)  
- **Refresh:** 4096 cycles / 64ms  

### **Descriptions:**  
- The **K4S281632B-TL75** is a high-speed CMOS synchronous DRAM designed for applications requiring high bandwidth and low power consumption.  
- It supports **burst read and write operations** with programmable burst lengths (1, 2, 4, 8, or full page).  
- Features **auto refresh and self refresh** modes for power efficiency.  
- Compatible with **PC133** memory standards.  

### **Features:**  
- **CAS Latency (CL):** 2 or 3 (programmable)  
- **Burst Mode:** Sequential or Interleaved  
- **Single 3.3V Power Supply**  
- **Fully Synchronous Operation**  
- **Auto & Self Refresh Modes**  
- **4 Banks for Concurrent Operation**  
- **Industrial Standard Pinout (54-pin TSOP II)**  

This memory IC is commonly used in **PC motherboards, networking devices, and embedded systems** requiring high-speed data access.  

Would you like any additional details?

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